Why capacitance rises
When a slab of dielectric is slid fully into the region between the plates, its molecules polarise in the applied field. As explained in dielectrics and polarisation, this polarisation is equivalent to two bound charged sheets — surface charge densities $+\sigma_P$ and $-\sigma_P$ — at the faces of the dielectric. These bound charges sit opposite the free plate charges and partly cancel them, so the net surface density driving the field falls from $\sigma$ to $(\sigma - \sigma_P)$.
A weaker net field means a smaller field $E$ inside the dielectric. Since capacitance is $C = Q/V$ and $V = Ed$, a reduction in the field for the same stored charge means a smaller voltage and therefore a larger capacitance. NCERT shows this works out cleanly to a single multiplicative factor: the capacitance becomes exactly $K$ times its vacuum value.
The polarised slab develops bound charges that oppose the plate charges. The net field falls to $E_0/K$, raising the capacitance to $KC_0$.
NCERT derivation of C = KC₀
Start from vacuum. With free charge density $\sigma = Q/A$, the field is $E_0 = \sigma/\varepsilon_0$, the voltage is $V_0 = E_0 d$, and the capacitance is
$$C_0 = \frac{Q}{V_0} = \frac{\varepsilon_0 A}{d}$$
Insert the dielectric. The field becomes $E = (\sigma - \sigma_P)/\varepsilon_0$, so the voltage is $V = (\sigma - \sigma_P)\,d/\varepsilon_0$. For a linear dielectric the bound density is proportional to the free density, and NCERT writes $(\sigma - \sigma_P) = \sigma/K$ with $K > 1$. Hence
$$V = \frac{\sigma d}{K \varepsilon_0} = \frac{Q d}{K \varepsilon_0 A}, \qquad C = \frac{Q}{V} = \frac{K \varepsilon_0 A}{d}$$
Comparing with the vacuum value gives the master relation, NCERT Eq. (2.54):
$$\boxed{\,C = K C_0\,}$$
The dielectric constant $K$ is therefore defined as the factor by which the capacitance increases when the dielectric is inserted fully. The product $\varepsilon = \varepsilon_0 K$ is the permittivity of the medium — exactly what NEET 2020 asked you to compute from $C_m = K C_0$.
The two cases: Q-const vs V-const
The capacitance rises to $KC_0$ no matter what. Everything else — voltage, charge, field, stored energy — depends entirely on a single circuit fact: was the battery still connected when the slab went in? This is the most-tested distinction in the entire topic.
Case A — battery disconnected (Q held constant)
The capacitor is charged, then unplugged, then the slab is inserted. Isolated plates cannot lose or gain charge, so $Q$ is frozen. With $C$ rising to $KC_0$:
$$V = \frac{Q}{C} = \frac{Q}{KC_0} = \frac{V_0}{K}, \quad E = \frac{E_0}{K}, \quad U = \frac{Q^2}{2C} = \frac{U_0}{K}$$
Voltage, field and energy all drop by a factor $K$. The lost energy is the work the dielectric does as it is pulled inward — the slab is sucked into the gap, lowering the system energy.
Case B — battery connected (V held constant)
The battery stays attached, pinning the voltage at its EMF. With $C$ rising to $KC_0$ and $V$ fixed:
$$Q = CV = KC_0 V_0 = K Q_0, \quad E = \frac{V_0}{d} = E_0, \quad U = \tfrac{1}{2}CV^2 = K U_0$$
Charge and energy rise by a factor $K$; the field stays the same because both $V$ and $d$ are unchanged. The battery pushes extra charge $K Q_0$ onto the plates and supplies the extra stored energy.
All of this rests on the vacuum result $C_0=\varepsilon_0 A/d$. Revisit the parallel plate capacitor derivation if the geometry feels shaky.
Q-constant and V-constant give OPPOSITE energy changes
The single most common error: assuming the energy always rises when a dielectric is inserted. It does not. With the battery disconnected (Q fixed) the energy falls to $U_0/K$; with the battery connected (V fixed) it rises to $K U_0$. Read the question for the word "disconnected" or "still connected" before touching the energy formula.
Q fixed → use $U = Q^2/2C$ → energy ↓. V fixed → use $U = \tfrac12 CV^2$ → energy ↑.
Capacitance always rises — that part never flips
Whatever is held constant, $C$ becomes $KC_0$ in both cases because $C = K\varepsilon_0 A/d$ depends only on geometry and the medium, not on the circuit. Only $V$, $Q$, $E$ and $U$ depend on the connection. Do not let a "battery disconnected" stem trick you into thinking the capacitance is unchanged.
$C \to KC_0$ in BOTH cases. The connection only decides which of $V$ and $Q$ is frozen.
Master comparison table
The table below is the spine of every dielectric problem. Memorise the two columns — which quantity is constant, and which way each of the others moves.
| Quantity | Battery disconnected (Q constant) | Battery connected (V constant) |
|---|---|---|
| Capacitance C | KC₀ (rises ×K) |
KC₀ (rises ×K) |
| Charge Q | Q₀ (fixed) |
KQ₀ (rises ×K) |
| Voltage V | V₀/K (falls) |
V₀ (fixed) |
| Field E | E₀/K (falls) |
E₀ (fixed) |
| Energy U | U₀/K (falls) |
KU₀ (rises ×K) |
| Energy source | slab pulled in; system loses U | battery supplies extra Q and U |
Partially-filled capacitor
If the dielectric does not fill the whole gap — a slab of constant $K$ and thickness $t$ (with $t < d$) sits parallel to the plates — the gap behaves as an air layer of length $(d - t)$ in series with a dielectric layer of length $t$. Following NCERT Example 2.8, the dielectric layer acts like an air gap of reduced length $t/K$, so the effective separation is $(d - t + t/K)$ and
$$C = \frac{\varepsilon_0 A}{d - t + \dfrac{t}{K}}$$
This one formula contains both limits. Setting $t = d$ recovers $C = K\varepsilon_0 A/d = KC_0$ (fully filled); setting $t = 0$ recovers $C = \varepsilon_0 A/d = C_0$ (empty). NEET 2025 extended this to two stacked slabs using the same series logic.
A slab of thickness $t$ leaves an air layer $(d-t)$. The dielectric counts as only $t/K$ of effective gap, so $C = \varepsilon_0 A/(d - t + t/K)$.
A slab of dielectric constant $K$ has thickness $\tfrac{3}{4}d$ and the same area as the plates. By what factor does the capacitance change? (NCERT Example 2.8)
Here $t = \tfrac34 d$, so the effective gap is $d - \tfrac34 d + \tfrac{3d}{4K} = \tfrac{d}{4} + \tfrac{3d}{4K} = \dfrac{d(K + 3)}{4K}$.
Therefore $C = \dfrac{\varepsilon_0 A}{d(K+3)/4K} = \dfrac{4K}{K+3}\,C_0$. The voltage falls by the factor $(K+3)/4K$ at fixed charge, and the capacitance rises by $4K/(K+3)$.
Conducting slab (K → ∞)
A conductor has no internal field, so it behaves like a dielectric with $K \to \infty$. In the partial-fill formula the term $t/K \to 0$, leaving
$$C = \frac{\varepsilon_0 A}{d - t}$$
A conducting slab of thickness $t$ simply removes a length $t$ of the gap: the effective separation shrinks from $d$ to $(d - t)$, raising the capacitance. Note that this result is independent of where the slab sits within the gap, since a conductor is an equipotential region.
Partial fill ≠ simply multiply by K
A slab thinner than the gap does not give $C = KC_0$. Students who skip the $(d - t + t/K)$ denominator and write $KC_0$ overshoot the answer badly. Use $KC_0$ only when the dielectric fills the gap completely, i.e. $t = d$.
Full fill: $C = KC_0$. Partial fill: $C = \varepsilon_0 A/(d - t + t/K)$.
Effect of dielectric in one screen
- Full dielectric fill raises capacitance to $C = K\varepsilon_0 A/d = KC_0$ — always, in every case ($K>1$).
- Battery disconnected (Q fixed): $V \to V_0/K$, $E \to E_0/K$, $U \to U_0/K$.
- Battery connected (V fixed): $Q \to KQ_0$, $E$ unchanged, $U \to KU_0$.
- Energy moves in opposite directions in the two cases — read whether the battery is removed.
- Partial slab of thickness $t$: $C = \varepsilon_0 A/(d - t + t/K)$.
- Conducting slab ($K\to\infty$): $C = \varepsilon_0 A/(d - t)$ — gap effectively shortened.